Cathodoluminescence Characterization of Point Defects Generated through Ion Implantations in 4H-SiC

Electrically active point defects in n-type 4H–SiC

An electrically active defect has been observed at a level position of ;0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ;5310 214 cm in epitaxial layers of 4H–SiC grown by vapor phase epitaxy with a concentration of approximately 1310 cm. Secondary ion mass spectrometry revealed no evidence of the transition metals Ti, V, and Cr. Furthermore, after elec...

Annealing of multivacancy defects in 4H-SiC

The annealing behavior of defects observed in electron paramagnetic resonance EPR and photoluminescence PL is discussed. We consider the divacancy the P6/P7 EPR centers and a previously unreported EPR center that we suggest is a VC-VSi-VC trivacancy and their relationship with each other and with the UD1–3 series of PL lines near 1 eV. We observe that the divacancy and the UD2 PL lines annealin...

Study of point defects in CdTe and CdTe:V by cathodoluminescence

The defect structure of CdTe substrates has often been investigated with luminescence techniques. In particular, a luminescence band normally referred as the 1.40 eV band, has been associated with recombination processes involving defects but its nature seems to be complex. Myers et al.’ in their photoluminescence study of CdTe wafers concluded that a significant part of the 1.40 eV band is dir...

Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy

Solid-state microwave annealing of ion-implanted 4H–SiC

Solid-state microwave annealing was performed at temperatures up to 2120 C for 30 s on ion-implanted 4H–SiC in N2 ambient. The surface roughness in the samples annealed without a surface cap at 1950 C is 2.65 nm for 10 lm · 10 lm atomic force microscopy scans. The sheet resistances measured on Aland P-implanted 4H–SiC, annealed by microwaves, are lower than the best conventional furnace anneali...